, u na. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 silicon pnp power transistor 2SB924 description ? wide safety operation area ? low collector saturation voltage : vce(sat)= -0.5v(max)@lc= -12a ? complement to type 2sd1240 applications ? designed for large current switching of relay drivers, high- speed inverters, converters applications. absolute maximum ratings(ta=25'c) symbol vcbo vceo vebo ic icm pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak total power dissipation @ tc=25'c junction temperature storage temperature range value -120 -80 -6 -25 -40 120 150 -55-150 unit v v v a a w 'c c /?%,! ; 4% 3 pin l.base j 2.emitter 1 [ 3.collestor(casei 1 to- 3 package 2 t-e *a > ' i -wu-d |*~it^ kfd)^ ^ji-? ^ >^j ^/ \- 1 ^ [ j c ,h? j/ j ? c f inni dim mm max a 39.00 6 25.s3 c 7.? d 0.90 e ?.40 26.87 8.50 1.10 1.60 g 10.92 h 546 k _ii^0 l 1675 n 19.40 0 4.00 u 30.00 v 4.30 13.50 1705 1962 420 3020 450 : sb t b i n.i somi-coikluctors reserves the right lo change test conditions, parameter limits and package dimensions \vitrunit notice. intbi-mation turnished by nj semi-conductors is believed to he both accurate find reliable at the time ofgoing lo press, i louever. n.i semi-coiidiietors assumes no rosponsihilit> tor an> errors or omissions discovered in ils use.' n.i semi-c'oiiductors enauiraues customers lo verily thai datasheels are current before placing orders. quality 5emi-conductors
silicon pnp power transistor 2SB924 electrical characteristics tc=25c unless otherwise specified symbol v(br)ceo v(br)cbo v(br)ebo vce(sat) icbo iebo hpe-1 hfe-2 ft parameter collector-emitter breakdown voltage collector-base breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain dc current gain current-gain ? bandwidth product conditions lc=-1ma; rbe= lc=-1ma;le=0 !e=-1ma; lc=0 ic=-12a;.ib=-1.2a vcb= -80v; ie= 0 veb= -4v; lc= 0 lc= -1a; vce= -2v lc=-12a;vce=-2v lc= -1a; vce= -2v min -80 -120 -6 70 30 typ. 20 max -0.5 -0.1 -0.1 280 unit v v v v ma ma mhz hpe-1 classifications q 70-140 r 100-200 s 140-280
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